Irradiation-induced microstructural change in helium-implanted single crystal and nano-engineered SiC

被引：40

作者：

Chen, C. H. ^{[1
]}

Zhang, Y. ^{[1
,2
]}

Fu, E. ^{[3
]}

Wang, Y. ^{[3
]}

Crespillo, M. L. ^{[1
]}

Liu, C. ^{[4
]}

Shannon, S. ^{[5
]}

Weber, W. J. ^{[1
,2
]}

机构：

[1] Univ Tennessee, Mat Sci & Engn Dept, Knoxville, TN 37996 USA

[2] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[3] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Mat Phys & Applicat Div, Los Alamos, NM 87545 USA

[4] China Univ Petr, Coll Sci, Dept Phys, Qingdao 266580, Peoples R China

[5] N Carolina State Univ, Dept Nucl Engn, Raleigh, NC 27695 USA

来源：

JOURNAL OF NUCLEAR MATERIALS | 2014年 / 453卷 / 1-3期

关键词：

SILICON-CARBIDE COMPOSITES; CAVITY FORMATION; ION BEAM; ACCUMULATION; DEFECTS; DAMAGE;

D O I：

10.1016/j.jnucmat.2014.07.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microstructural evolution induced by helium implantation and subsequent heavy ion irradiation has been investigated in single crystal and nano-engineered (NE) 3C SiC. Implantation with 65 keV He+ ions was performed at 277 degrees C, and the helium depth distribution was determined by elastic recoil detection analysis (ERDA). Transmission electron microscopy (TEM) could not resolve the presence of bubbles in any of the helium-implanted single crystal SiC. However, helium platelets and small dislocation loops (similar to 50 nm in diameter) were observed in the single crystal sample with the highest implantation fluence after 1 h annealing at 700 degrees C. Following irradiation with 9 MeV Au3+ ions at 700 degrees C, no bubbles were observed in the helium-implanted single crystal SiC, regardless of helium fluence. For the helium-implanted NE SiC, subsequent irradiation with 9 MeV Au ions to a dose of 10 dpa at 700 degrees C resulted in the formation and growth of bubbles, and a bimodal helium bubble size distribution was observed at the highest helium concentration (8000 appm) in the NE SiC. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：280 / 286

页数：7

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