Effect of ytterbium impurity on the properties of gallium arsenide epitaxial layers

被引：0
|
作者：
Arbenina, VV
Kabanova, EG
机构：
来源：
INORGANIC MATERIALS | 1997年 / 33卷 / 07期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Yb-doped GaAs layers were grown by liquid-phase epitaxy (LPE) from high-temperature solution. The introduction of Yb into the melt leads to changes in the electrical properties and low-temperature photoluminescence spectra of the epilayers. The effect of Yb doping is discussed in relation to the chemistry of impurities in LPE GaAs.
引用
收藏
页码：651 / 653
页数：3
相关论文
共 50 条
12345