Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor

被引:149
作者
Li, Ya [1 ]
Chu, Jinxing [1 ]
Duan, Weijie [1 ]
Cai, Guangshuo [1 ]
Fan, Xihua [1 ]
Wang, Xinzhong [3 ]
Wang, Gang [1 ,2 ]
Pei, Yanli [1 ,3 ]
机构
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, Foshan Res Inst, Foshan 528222, Guangdong, Peoples R China
[3] Shenzhen Inst Informat Technol, Dept Elect Commun & Technol, Shenzhen 518172, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
NiO memristor; solution combustion process; analog and digital resistive switching; synaptic plasticity; MEMORY; FILMS;
D O I
10.1021/acsami.8b05749
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, a NiO-based resistive memristor was manufactured using a solution combustion method. In this device, both analog and digital bipolar resistive switching were observed. They are dependent on the stressed bias voltage. Prior to the electroforming, the analog bipolar resistive switching was realized through the change of the Schottky barrier at p-type NiO/Ag junction by the local migration of the oxygen ion in the interface. On the basis of the analog resistive switching, several synaptic functions were demonstrated, such as nonlinear transmission characteristics, spike-rate-dependent plasticity, long-term/short-term memory, and "learning-experience" behavior. In addition, once the electroforming operation was carried out using a high applied voltage, the resistive switching was changed from analog to digital. The formation and rupture of the oxygen vacancy filaments is dominant. This novel memristor with the multifunction of analog and digital resistive switching is expected to decrease the manufacturing complexity of the electrocircuits containing analog/digital memristors.
引用
收藏
页码:24598 / 24606
页数:9
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