Mitigating graphene etching on SiO2 during fluorination by XeF2

被引：3

作者：

Copetti, G. ^{[1
]}

Nunes, E. H. ^{[2
]}

Soares, G. V. ^{[1
]}

Radtke, C. ^{[2
]}

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil

来源：

MATERIALS LETTERS | 2019年 / 252卷

关键词：

Carbon materials; XPS; Surfaces; Graphene; Fluorination;

D O I：

10.1016/j.matlet.2019.05.086

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. Pulsed XeF2 exposure is shown to suppress etching, resulting in high-quality and homogeneous fluorographene in large areas. (C) 2019 Published by Elsevier B.V.

引用

页码：11 / 14

页数：4

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