Role of Zinc Source in Chemical Bath Deposition of Zinc Sulfide Thin Films on Si3N4

被引：6

作者：

Luque, P. A. ^{[1
]}

Gomez-Gutierrez, Claudia M. ^{[1
]}

Lastra, G. ^{[2
]}

Carrillo-Castillo, A. ^{[3
]}

Quevedo-Lopez, M. A. ^{[4
,5
]}

Olivas, A. ^{[6
]}

机构：

[1] UABC, Fac Ingn Arquitectura & Diseno, Ensenada 22860, Baja California, Mexico

[2] UNAM, Ctr Nanociencias & Nanotecnol, PCeIM, Ensenada 22860, Baja California, Mexico

[3] UACJ, Inst Ingn & Tecnol, Cd Juarez 32310, Chih, Mexico

[4] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[5] Univ Sonora, Dept Polimeros & Mat, Hermosillo 83000, Sonora, Mexico

[6] UNAM, Ctr Nanociencias & Nanotecnol, Ensenada 22860, Baja California, Mexico

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2014年 / 43卷 / 11期

关键词：

Chemical bath deposition; ZnS; thin films; zinc source; ZNS; GROWTH;

D O I：

10.1007/s11664-014-3334-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc sulfide (ZnS) thin films have been grown by chemical bath deposition (CBD) using different zinc sources on a silicon nitride (Si3N4) substrate in an alkaline solution. The zinc precursors used were zinc acetate, zinc nitrate, and zinc sulfate. The structural and optical characteristics of the ZnS thin films obtained were analyzed. The morphology of the surface showed that the films were compact and uniform, with some pinholes in the surface depending on the zinc source. The most homogeneous and compact surfaces were those obtained using zinc nitrate as the zinc source with a root-mean-square (RMS) value of 3 nm. The transmission spectra indicated average transmittance of 80% to 85% in the spectral range from 300 nm to 800 nm, and the optical bandgap calculated for the films was around 3.71 eV to 3.74 eV.

引用

页码：4317 / 4321

页数：5

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