Transport properties in anisotropic cross junctions by tight-binding calculations

被引:0
|
作者
Takagaki, Y. [1 ]
Ploog, K. H. [1 ]
机构
[1] Paul Drude Inst Festkorperelektron, D-10117 Berlin, Germany
来源
PHYSICAL REVIEW B | 2006年 / 74卷 / 07期
关键词
D O I
10.1103/PhysRevB74.075325
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnetotransport properties in anisotropic cross junctions are numerically investigated. We examine a system in which a uniaxial anisotropy of a two-dimensional electron gas leads to nonidentical transmission probabilities of an electron into the left- and right-hand-side leads. The Hall resistance in the absence of magnetic field is, as a direct consequence, nonzero. Its polarity changes periodically according to the location of the Fermi level with respect to the thresholds of one-dimensional subbands in the leads. The finite zero-field Hall resistance is not annihilated by potential disorder and is only weakly dependent on the number of occupied subbands. The anisotropy is manifested also at the transitions between quantum Hall plateaus.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] CHARGE SELF-CONSISTENT TIGHT-BINDING CALCULATIONS
    HANKE, M
    STREHLOW, R
    KUHN, W
    ACTA PHYSICA POLONICA A, 1986, 69 (06) : 971 - 974
  • [32] Surface passivation for tight-binding calculations of covalent solids
    Bernstein, N.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (26)
  • [33] TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI(111)
    PANDEY, KC
    PHILLIPS, JC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 214 - 214
  • [34] Atomistic tight-binding approaches to quantum transport
    Niquet, Yann-Michel
    Lherbiert, Aurelien
    Persson, Martin P.
    Triozon, Francois
    Roche, Stephan
    Blase, Xavier
    Rideau, Denis
    IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS, 2009, : 293 - +
  • [35] Tight-binding calculations of Ge-nanowire bandstructures
    Bescond, Marc
    Cavassilas, Nicolas
    Nehari, Karim
    Lannoo, Michel
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2007, 6 (1-3) : 341 - 344
  • [36] TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI(111)
    PANDEY, KC
    PHILLIPS, JC
    SOLID STATE COMMUNICATIONS, 1974, 14 (06) : 439 - 441
  • [37] LDA and tight-binding: Total energy calculations of polyparaphenylene
    Miao, MS
    Van Doren, VE
    Van Camp, PE
    Straub, G
    COMPUTATIONAL MATERIALS SCIENCE, 1998, 10 (1-4) : 362 - 367
  • [38] Strained graphene: tight-binding and density functional calculations
    Ribeiro, R. M.
    Pereira, Vitor M.
    Peres, N. M. R.
    Briddon, P. R.
    Castro Neto, A. H.
    NEW JOURNAL OF PHYSICS, 2009, 11
  • [39] Tight-binding Hamiltonians for realistic electronic structure calculations
    Papaconstantopoulos, DA
    Lach-Hab, M
    Mehl, MJ
    PHYSICA B-CONDENSED MATTER, 2001, 296 (1-3) : 129 - 137
  • [40] BAND THEORY, VALENCE BOND, AND TIGHT-BINDING CALCULATIONS
    LOWDIN, PO
    JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) : 251 - +