Low-temperature deposition of Si thin layer by gas-source molecular beam epitaxy

被引：5

作者：

Ohtsuka, K ^{[1
]}

Murai, A ^{[1
]}

Oizumi, T ^{[1
]}

Yoshida, T ^{[1
]}

Kurabayashi, T ^{[1
]}

Suto, K ^{[1
]}

Nishizawa, J ^{[1
]}

机构：

[1] Telecommun Advancement Org Japan, SENDAI Res Ctr, Aoba Ku, Sendai, Miyagi 9800868, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 01期

关键词：

D O I：

10.1116/1.582115

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-temperature gas-source molecular beam epitaxy using hydride sources for the fabrication of Si thin layers was investigated. In the case of a Si2H6 source, the temperature dependence of the growth rate is relatively small in the desorption- and/or decomposition-dominated region at temperatures of 300-500 degrees C, which is useful for atomic- and molecular-level controlled growth. Simultaneous and alternate supply of oxygen prevented the deposition of SiO2 and resulted in the deposition of Si. Supplying oxygen brought about a decrease of the deposition rate of Si. (C) 2000 American Vacuum Society. [S0734-2101(00)01601-8].

引用

页码：48 / 50

页数：3

共 12 条

[1]

AKAZAWA H, 1995, J APPL PHYS, V78, P2724

[2] QUASI-MONOLAYER DEPOSITION OF SILICON DIOXIDE [J].

GASSER, W ;

UCHIDA, Y ;

MATSUMURA, M .

THIN SOLID FILMS, 1994, 250 (1-2) :213-218

[3] ATOMIC LAYER CONTROLLED DEPOSITION OF SIO2 AND AL2O3 USING ABAB - BINARY REACTION SEQUENCE CHEMISTRY [J].

GEORGE, SM ;

SNEH, O ;

DILLON, AC ;

WISE, ML ;

OTT, AW ;

OKADA, LA ;

WAY, JD .

APPLIED SURFACE SCIENCE, 1994, 82-3 :460-467

[4] HYDROGEN DESORPTION FROM SI - HOW DOES THIS RELATE TO FILM GROWTH [J].

GREENLIEF, CM ;

ARMSTRONG, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1810-1815

[5] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING DISILANE [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (18) :1484-1486

[6] HIGH-QUALITY SILICON EPITAXY AT 500-DEGREES-C USING SILANE GAS-SOURCE MOLECULAR-BEAM TECHNIQUE [J].

HIROSE, F ;

SUEMITSU, M ;

MIYAMOTO, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L2003-L2006

[7] ATOMIC LAYER EPITAXY OF SI USING ATOMIC H [J].

IMAI, S ;

IIZUKA, T ;

SUGIURA, O ;

MATSUMURA, M .

THIN SOLID FILMS, 1993, 225 (1-2) :168-172

[8] SILICON ATOMIC LAYER GROWTH CONTROLLED BY FLASH HEATING IN CHEMICAL-VAPOR DEPOSITION USING SIH4 GAS [J].

MUROTA, J ;

SAKURABA, M ;

ONO, S .

APPLIED PHYSICS LETTERS, 1993, 62 (19) :2353-2355

[9] SILICON MOLECULAR LAYER EPITAXY [J].

NISHIZAWA, J ;

AOKI, K ;

SUZUKI, S ;

KIKUCHI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) :1898-1904

[10] MOLECULAR LAYER EPITAXY OF SILICON [J].

NISHIZAWA, J ;

AOKI, K ;

SUZUKI, S ;

KIKUCHI, K .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :502-505

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