Modelling facet growth of Cu thin films

被引：0

作者：

Wang, ZY ^{[1
]}

Li, YH ^{[1
]}

Adams, JB ^{[1
]}

机构：

[1] Arizona State Univ, Sci & Engn Mat Program, Tempe, AZ 85287 USA

来源：

1999 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS | 1999年

关键词：

Kinetic Lattice Monte Carlo simulation; Thin Film Growth; Cu;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a Kinetic Lattice Monte Carlo (KLMC) model, which describes deposition, surface self-diffusion, nucleation, and film growth on fcc metal substrates. The activation energies for diffusion are calculated using embedded-atom method (EAM). Using this model, we determine the relative growth rates of (100), (110) and (111) facets as a function of substrate temperature, deposition rate and facet size.

引用

页码：455 / 458

页数：4

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