Analysis of Parasitics on CMOS based Memristor Crossbar Array for Neuromorphic Systems

被引：9

作者：

Thomas, Sherin A. ^{[1
]}

Vohra, Sahibia Kaur ^{[1
]}

Kumar, Rahul ^{[1
]}

Sharma, Rohit ^{[1
]}

Das, Devarshi Mrinal ^{[1
]}

机构：

[1] Indian Inst Technol Ropar, Dept Elect Engn, Rupnagar, Punjab, India

来源：

2021 IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2021年

关键词：

Memristor; crossbar array; interconnect; neuro-morphic system; signal delay;

D O I：

10.1109/MWSCAS47672.2021.9531867

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a crossbar structure with CMOS based memristor emulator is presented where the spacing between the crossbar is modeled as per the memristor emulator circuit's area for a real-time design. The interconnect dimension in the crossbar structure corresponds to 180 nm CMOS technology, and the parasitics of the crossbar are extracted using ANSYS Q3D extractor. The extracted parasitic components are used to design a RC circuit model with the memristor emulator circuit to analyze the signal delay for different states of the memristor and crossbar sizes using the Cadence Virtuoso platform. The results of the crossbar architecture provide an insight into how the signal delay gets affected by the state of the memristor and with varying the load capacitance present at the memristor crossbar array's output.

引用

页码：309 / 312

页数：4

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