Electron Transfer at the Metal Oxide/Electrolyte Interface: A Simple Methodology for Quantitative Kinetics Evaluation

被引:7
作者
Azcarate, Iban [1 ,2 ,3 ]
Costentin, Cyrille [4 ,6 ]
Methivier, Christophe [5 ]
Laberty-Robert, Christel [2 ,3 ]
Grimaud, Alexis [1 ,3 ]
机构
[1] Coll France, UMR 8260, Chim Solide & Energie, F-75231 Paris 05, France
[2] UPMC Univ Paris 06, Sorbonne Univ, Coll France, Lab Chim Matiere Condensee Paris, 4 Pl Jussieu, F-75005 Paris, France
[3] CNRS FR3459, RS2E, 33 Rue St Leu, F-80039 Amiens, France
[4] Univ Paris Diderot, Lab Electrochim Mol, Sorbonne Paris Cite, Unite Mixte Rech Univ CNRS 7591, Batiment Lavoisier,15 Rue Jean de Baif, F-75205 Paris 13, France
[5] UPMC Univ Paris 06, Sorbonne Univ, Lab Reactivite Surface, Unite Mixte Rech UPMC CNRS 7197, 4 Pl Jussieu, F-75005 Paris, France
[6] Harvard Univ, Dept Chem & Chem Biol, 12 Oxford St, Cambridge, MA 02138 USA
关键词
PROCESSED TUNGSTEN-OXIDE; TRANSFER RATE CONSTANTS; CHARGE-TRANSFER; SEMICONDUCTOR ELECTRODES; ENERGY-LEVELS; THIN-FILM; ELECTROCHEMICAL PROPERTIES; SOLAR-CELLS; WATER; WO3;
D O I
10.1021/acs.jpcc.8b02289
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
While quantitative models exist for measuring rate constants for electron exchange at the surface of semiconductors to or from redox couples in solution, their use is very limited for studying transition metal oxide electrodes. Taking advantage of the possibility of tuning the doping level of WO3 by thermal treatment, we measured the rate constants for electron injection from soluble probes in the so-called reverse mode. Hence, we could demonstrate that intermediate states located below the conduction band take part to the oxidation process and that the rate constant is bimolecular with a first order dependence on the concentration of redox probes and the concentration of intermediate states. A kinetics model was thereby developed to describe this reverse mode and a zone diagram established, which can then be used to quickly assess rate constants for interfacial electron transfer on the surface of transition metal oxides semiconductors that are critical for applications such as solar energy conversion.
引用
收藏
页码:12761 / 12770
页数:10
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