Low resistivity p-ZnO films fabricated by sol-gel spin coating

被引:92
|
作者
Cao, Yongge [1 ]
Miao, Lei [1 ]
Tanemura, Sakae [1 ]
Tanemura, Masaki [1 ]
Kuno, Yohei [1 ]
Hayashi, Yasuhiko [1 ]
机构
[1] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
关键词
D O I
10.1063/1.2215618
中图分类号
O59 [应用物理学];
学科分类号
摘要
N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10(-1) Omega cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces. (c) 2006 American Institute of Physics.
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页数:3
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