Thermally stable InAlAs/InGaAs heterojunction FET with AlAs/InAs superlattice insertion layer

被引：7

作者：

Fujihara, A

Onda, K

Nakayama, T

Miyamoto, H

Ando, Y

Wakejima, A

Mizuki, E

Kuzuhara, M

机构：

[1] Kansai Electronics Res. Laboratories, NEC Corporation, Otsu, Shiga 520, 9-1

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 11期

关键词：

field effect transistors; semiconductor superlattices; thermal stability;

D O I：

10.1049/el:19960645

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel InAlAs/InGaAs heterojunction FET (HJFET), with an AlAs/InAs superlattice inserted between an InAlAs Schottky layer and an InAlAs donor layer, is proposed. The developed device exhibited initial DC characteristics identical to those of the conventional lattice-matched HJFET and improved thermal stability owing to the inserted superlattice layer acting as a barrier against impurity diffusion.

引用

页码：1039 / 1041

页数：3

共 10 条

[1] SURFACE RELATED DEGRADATION OF INP-BASED HEMTS DURING THERMAL-STRESS [J].