Direct Synthesis of van der Waals Solids

被引：238

作者：

Lin, Yu-Chuan ^{[1
,2
]}

Lu, Ning ^{[3
]}

Perea-Lopez, Nestor ^{[2
,4
]}

Li, Jie ^{[5
]}

Lin, Zhong ^{[2
,4
]}

Peng, Xin ^{[3
]}

Lee, Chia Hui ^{[1
,2
]}

Sun, Ce ^{[3
]}

Calderin, Lazaro ^{[1
,2
]}

Browning, Paul N. ^{[1
,2
]}

Bresnehan, Michael S. ^{[1
,2
]}

Kim, Moon J. ^{[3
]}

Mayer, Theresa S. ^{[5
]}

Terrones, Mauricio ^{[2
,4
]}

Robinson, Joshua A. ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Ctr Dimens & Layered Mat 2, University Pk, PA 16802 USA

[3] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[4] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[5] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

ACS NANO | 2014年 / 8卷 / 04期

关键词：

heterostructure; chemical vapor deposition; epitaxial graphene; transition metal dichalcogenides; layered materials; two-dimensional materials; photosensor; photocurrent; photoresponsivity; HEXAGONAL BORON-NITRIDE; LARGE-AREA; EPITAXIAL GRAPHENE; THIN-FILM; MOS2; GROWTH; LAYERS; PERFORMANCE; TRANSISTORS;

D O I：

10.1021/nn5003858

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The stacking of two-dimensional layered materials, such as semiconducting transition metal dichalcogenides (TMDs), insulating hexagonal boron nitride (hBN), and semimetallic graphene, has been theorized to produce tunable electronic and optoelectronic properties. Here we demonstrate the direct growth of MoS2, WSe2, and hBN on epitaxial graphene to form large-area van der Waals heterostructures. We reveal that the properties of the underlying graphene dictate properties of the heterostructures, where strain, wrinkling, and defects on the surface of graphene act as nucleation centers for lateral growth of the overlayer. Additionally, we show that the direct synthesis of TMDs on epitaxial graphene exhibits atomically sharp interfaces. Finally, we demonstrate that direct growth of MoS2 on epitaxial graphene can lead to a 103 Improvement in photoresponse compared to MoS2 alone.

引用

页码：3715 / 3723

页数：9

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