Comparison of Forward and Reverse Reactions in Hydrogen Generation between GaN, InGaN, Nanocrystalline TiO2 and Pt Electrodes during Water Electrolysis

被引:9
作者
Usui, Shogo [1 ]
Kikawa, Sadayuki [1 ]
Kobayashi, Naoki [1 ]
Yamamoto, Jun [2 ]
Ban, Yuzaburo [2 ]
Matsumoto, Kou [2 ]
机构
[1] Univ Electrocommun, Dept Appl Phys & Chem, Tokyo 1828585, Japan
[2] Taiyo Nippon Sanso EMC Ltd, Tokyo 2060001, Japan
关键词
semiconductor photoelectrode; n; p-type GaN; p-type InGaN; nanocrystalline TiO2; water photolysis; hydrogen generation; cyclic voltammetry;
D O I
10.1143/JJAP.47.8793
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electron transport between n-, p-GaN, and p-In0.12Ga0.88N electrodes and electrolyte Solution is studied by cyclic voltammetry under dark conditions, and compared with that between Pt and nanocrystalline TiO2/Ti electrodes. Both forward and reverse reactions of 2H(+) + 2e(-) = H-2 occur for Pt and TiO2/Ti electrodes. In contrast. in n-, p-GaN and p-In0.12Ga0.88N electrodes, only the forward reaction of 2H(+) + 2e(-) -> H-2 occurs and no reverse reaction is observed. These results are consistent with the finding that the conduction band-edge potentials of n-, p-GaN, and p-In0.12Ga0.88N are higher than the reduction potential of H+(aq) in electrolyte, determined by flat-band potential measurement. These differences in potential work as,in energy barrier for the reverse electron transfer from H-2 molecules to electrodes. These results also support the experimental results of spontaneous H-2 generation caused by the band-gap excitation of p-GaN and p-In0.12Ga0.88N electrodes without applying bias voltage. [DOI: 10.1143/JJAP.47.8793]
引用
收藏
页码:8793 / 8795
页数:3
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