Cooling rate in diode laser bonding

被引：6

作者：

Fritz, MA ^{[1
]}

Cassidy, DT ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

来源：

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES | 2004年 / 27卷 / 01期

关键词：

Au-Sn; die bonding; diode laser; gold-tin solder; pre-tinned solder; solder voids; strain; thermal impedance;

D O I：

10.1109/TCAPT.2004.825749

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diode laser die bonding parameters were measured for the cases of slow cool and rapid cool die bonding processes. The thermal strain, solder composition and structure, thermal impedance, and bond strength of InP based diode lasers bonded to AIN chip carriers using pre-deposited Au-Sn solder were examined. Relative to the rapid cool process, the slow cool process was found on average: to induce greater strain in the laser chips, to exhibit a larger thermal impedance in the die bonds; to produce a rougher solder structure; and, to promote alloying of the solder material and chip carrier metallization.

引用

页码：147 / 154

页数：8

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