A GLOBALLY CONVERGENT GUMMEL MAP FOR OPTIMAL DOPANT PROFILING

被引：8

作者：

Burger, Martin ^{[1
]}

Pinnau, Rene ^{[2
]}

机构：

[1] Univ Munster, Inst Numer & Angew Math, D-48149 Munster, Germany

[2] Tech Univ Kaiserslautern, Fachbereich Math, D-67663 Kaiserslautern, Germany

来源：

MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES | 2009年 / 19卷 / 05期

关键词：

Semiconductors; optimal design; dopant profiling; generalized Gummel iteration; convergence; drift diffusion model; energy transport model; MODEL;

D O I：

10.1142/S0218202509003619

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

We study a generalized Gummel iteration for the solution of an abstract optimal semiconductor design problem, which covers a wide range of semiconductor models. The algorithm is to exploit the special structure of the KKT system and it can be interpreted as a descent algorithm for an appropriately defined cost functional. This allows for a convergence proof which does not need the assumption of small biasing voltages. The algorithm is explicitly stated for the (quantum) drift diffusion model, the energy transport model and the microscopic Schrodinger-Poisson model.

引用

页码：769 / 786

页数：18

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