Design of High Gain, Low Power CMOS Multi-Standard LNA

被引：0

作者：

Fathima, Amra ^{[1
]}

Sushma, P. S. ^{[1
]}

Gaonkar, Siddesh ^{[1
]}

机构：

[1] NMAMIT, Dept ECE, Nitte, Karnataka, India

来源：

2016 IEEE INTERNATIONAL CONFERENCE ON RECENT TRENDS IN ELECTRONICS, INFORMATION & COMMUNICATION TECHNOLOGY (RTEICT) | 2016年

关键词：

CMOS; Gain; GPS; GSM; LNA; LTE; NF; RF; UMTS; WCDMA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF front-end defines everything between antenna and IF stage-including filter, amplifier and mixer. Low Noise Amplifier is an important building block of wireless receiver. A single-ended multi-standard CMOS LNA is designed for reconfigurable applications. The design addresses GSM, GPS, WCDMA, UMTS and LTE frequency bands. Based on wideband input matching, the designed LNA covers all band of interest. For multi-standard aim, capacitive switching technique is used to select desired bands of interest. The design is implemented using 90nm CMOS technology, achieving a Voltage Gain more than 30dB, Noise Figure less than 5dB and IIP3 better than -5dBm. The LNA consumes 6.2mW power at supply of 1V.

引用

页码：663 / 666

页数：4

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