Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes

被引:4
作者
Chen, Zhanghui [1 ]
Jiang, Xiangwei [1 ]
Dong, Shan [1 ]
Li, Jingbo [1 ]
Li, Shushen [1 ]
Wang, Linwang [2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
基金
中国国家自然科学基金;
关键词
INP(100) SURFACES; MONTE-CARLO; PHOTOEMISSION; TRANSPORT; SEMICONDUCTORS; SPECTROSCOPY; GAAS;
D O I
10.1063/1.4862645
中图分类号
O59 [应用物理学];
学科分类号
摘要
Energy distribution and angular distribution of the photoelectrons from InP photocathodes are investigated using a precise Monte Carlo model. It is found that Gamma-valley electrons contribute to the first peak of the energy distribution curve, but the second peak is contributed by both Gamma-valley and L-valley electrons rather than only L-valley electrons. L valley electrons are shown to have a smaller angular spread than Gamma-valley electrons, which is attributed to the much higher potential energy of L-valley minimum. The further simulation indicates that the performance of InP photocathodes can be improved by increasing the hole concentration or decreasing the temperature, but the activation layer thickness variation only has very slight influence on either energy or angular distribution. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:4
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