Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection

被引：30
作者：
Khoshakhlagh, A. [1 ]
Plis, E. [1 ]
Myers, S. [1 ]
Sharma, Y. D. [1 ]
Dawson, L. R. [1 ]
Krishna, S. [1 ]
机构：
[1] Univ New Mexico, Dept Elect & Comp Engn, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期
关键词：
Interfaces; Superlattices; Antimonides; Molecular beam epitaxy; Infrared devices; GASB; INAS;
D O I：
10.1016/j.jcrysgro.2008.11.027
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Optimization of various growth parameters for type-II 13 MLs InAs/7 MLs GaSb strained layer superlattices (SLSs) (lambda(cut-off) similar to 8 mu m at 300 K), grown by solid source molecular beam epitaxy, has been undertaken. This includes a systematic study to investigate the influence of the effect of the growth temperature and the thickness of an InSb layer formed at the GaSb-on-InAs interface on the properties of the superlattice. We present optical and structural characterization of these SLS structures, using high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and cross-sectional scanning transmission electron microscope (STEM). Optimized growth parameters were then used to grow a 2-mu m-thick active region for a SLS detector designed to operate in the long-wave infrared (LWIR) region, which demonstrated full-width half-maximum (FWHM) of 16 arcsec for the first SLS satellite peak and nearly zero lattice mismatch between zero-order SLS peak and GaSb substrate. (C) 2008 Elsevier B.V. All rights reserved.
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页码：1901 / 1904
页数：4
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