Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping

被引:1333
作者
Mouri, Shinichiro [1 ]
Miyauchi, Yuhei [1 ,2 ]
Matsuda, Kazunari [1 ]
机构
[1] Kyoto Univ, Inst Adv Energy, Kyoto 6110011, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
关键词
Molybdenum disulfide; 2D semiconductors; photoluminescence; excitons; transition metal dichalcogenide; chemical doping; VALLEY POLARIZATION; LAYER; SEMICONDUCTORS; TRIONS; WS2;
D O I
10.1021/nl403036h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate the tunability of the photoluminescence (PL) properties of monolayer (1L)-MoS2 via chemical doping. The PL intensity of 1L-MoS2 was drastically enhanced by the adsorption of p-type dopants with high electron affinity but reduced by the adsorption of n-type dopants. This PL modulation results from switching between exciton PL and trion PL depending on carrier density in 1L-MoS2. Achievement of the extraction and injection of carriers in 1L-MoS2 by this solution-based chemical doping method enables convenient control of optical and electrical properties of atomically thin MoS2.
引用
收藏
页码:5944 / 5948
页数:5
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