Effects of Electromigration on Interfacial Reactions in the Ni/Sn-Zn/Cu Solder Interconnect
被引:15
作者:
Zhang, X. F.
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Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
Zhang, X. F.
[1
]
Guo, J. D.
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Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
Guo, J. D.
[1
]
Shang, J. K.
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Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USAChinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
Shang, J. K.
[1
,2
]
机构:
[1] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
Electromigration in the Ni/Sn-Zn/Cu solder interconnect was studied with an average current density of 3.51 x 10(4) A/cm(2) for 168.5 h at 150A degrees C. When the electrons flowed from the Ni side to the Cu side, uniform layers of Ni5Zn21 and Cu5Zn8 were formed at the Ni/Sn-Zn and Cu/Sn-Zn interfaces. However, upon reversing the current direction, where electron flow was from the Cu side to the Ni side, a thicker Cu6Sn5 phase replaced the Ni5Zn21 phase at the Ni/Sn-Zn interface, whereas at the Cu/Sn-Zn interface, a thicker beta-CuZn phase replaced the Cu5Zn8 phase.
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
Hong, K. K.
;
Ryu, J. B.
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Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
Samsung Elect, Package Engn Team, Asan 316851, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
Ryu, J. B.
;
Park, C. Y.
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机构:
Samsung Elect, Package Engn Team, Asan 316851, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
Park, C. Y.
;
Huh, J. Y.
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机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
Hong, K. K.
;
Ryu, J. B.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
Samsung Elect, Package Engn Team, Asan 316851, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
Ryu, J. B.
;
Park, C. Y.
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Elect, Package Engn Team, Asan 316851, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
Park, C. Y.
;
Huh, J. Y.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea