Electronic structure of pseudo-one-dimensional dangling-bond structures fabricated on a hydrogen-terminated Si(100)2x1 surface

被引：0

作者：

Hitosugu, T ^{[1
]}

Heike, S ^{[1
]}

Kajiyama, H ^{[1
]}

Wada, Y ^{[1
]}

Onogi, T ^{[1
]}

Hashizume, T ^{[1
]}

Watanabe, S ^{[1
]}

Hasegawa, T ^{[1
]}

Kitazawa, K ^{[1
]}

Li, ZQ ^{[1
]}

Ohno, K ^{[1
]}

Kawazoe, Y ^{[1
]}

机构：

[1] Univ Tokyo, Dept Superconduct, Tokyo, Japan

来源：

QUANTUM COHERENCE AND DECOHERENCE | 1999年

关键词：

D O I：

10.1016/B978-044450091-5/50056-7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Various atomic-scale dangling-bond (DB) structures on a hydrogen-terminated Si(100)-2 x 1-H surface, made of paired and/or unpaired DBs, are fabricated and studied by scanning tunneling microscopy/spectroscopy (STM/STS). We compared our experimental results with first-principles calculations and concluded that the structures, made of only paired DBs and of only unpaired DBs along a dimer row, show semiconductive electronic states with an energy gap. For the DB structure made of only unpaired DBs, we observed charge redistribution in the DB structure due to Peierls distortion. We propose that in fabricating a structure that has finite density of states at the Fermi energy on this surface, the unpaired and paired DBs should be mixed properly to suppress Peierls distortion.

引用

页码：257 / 260

页数：4

共 9 条

[1] SCANNING-TUNNELING-MICROSCOPY OF THE INTERACTION OF HYDROGEN WITH SILICON SURFACES [J].