BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

被引：70

作者：

Won, Sung Sik ^{[1
]}

Kawahara, Masami ^{[2
]}

Kuhn, Lindsay ^{[1
]}

Venugopal, Vineeth ^{[1
]}

Kwak, Jiyeon ^{[3
]}

Kim, Ill Won ^{[4
,5
]}

Kingon, Angus I. ^{[1
]}

Kim, Seung-Hyun ^{[1
]}

机构：

[1] Brown Univ, Sch Engn, Providence, RI 02912 USA

[2] Kojundo Chem Lab Co Ltd, Sakado, Saitama 3500284, Japan

[3] Inha Univ, Coll Med, Dept Physiol & Biophys, Incheon 402752, South Korea

[4] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[5] Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 15期

基金：

美国国家科学基金会;

关键词：

PERFORMANCE; DEVICES;

D O I：

10.1063/1.4980113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Environmentally benign lead-free ferroelectric (K-0.5,Na-0.5)(Mn-0.005,Nb-0.995)O-3 (KNMN) thin film capacitors with a small concentration of a BiFeO3 (BF) dopant were prepared by a cost effective chemical solution deposition method for high energy density storage device applications. 6 mol. % BF-doped KNMN thin films showed very slim hysteresis loops with high maximum and near-zero remanent polarization values due to a phase transition from the orthorhombic structure to the pseudo-cubic structure. Increasing the electric field up to 2 MV/cm, the total energy storage density (J(total)), the effective recoverable energy density (J(eff)), and the energy conversion efficiency (g) of lead-free KNMN-BF thin film capacitors were 31.0 J/cm(3), 28.0 J/cm(3), and 90.3%, respectively. In addition, these thin film capacitors exhibited a fast discharge time of a few mu s and a high temperature stability up to 200 degrees C, proving their strong potential for high energy density storage and conversion applications. Published by AIP Publishing.

引用

页数：5

共 23 条

[1] Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times [J].