Electrical field induced precipitation reaction and percolation in Ag30Ge17Se53 amorphous electrolyte films

被引：25

作者：

Chen, Liang ^{[1
,2
]}

Liu, Zhiguo ^{[1
,2
]}

Xia, Yidong ^{[1
,2
]}

Yin, Kuibo ^{[1
,2
]}

Gao, Ligang ^{[1
,2
]}

Yin, Jiang ^{[2
,3
]}

机构：

[1] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

关键词：

amorphous semiconductors; chalcogenide glasses; crystal microstructure; electrical resistivity; electrochemical electrodes; electrolytes; germanium compounds; percolation; platinum; precipitation (physical chemistry); reaction kinetics; semiconductor thin films; silver; silver compounds; transmission electron microscopy; MEMRISTOR; MEMORIES;

D O I：

10.1063/1.3123251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructural evolution and resistive switching of glassy Ag30Ge17Se53 electrolyte films clipped by Ag active electrode, at which a positive bias was applied, and Pt inert electrode, were investigated by transmission electron microscopy observations and I-V measurements as functions of the period of electrical field treatment. It is revealed that an electrical field induced precipitation reaction forming conductive particles with orthorhombic Ag2Se structure and followed growth and networking of these particles, leading to an electrical percolation, are responsible for the transition from high resistive to high conductive state of the system. The kinetics of the precipitation reaction was also analyzed.

引用

页数：3

共 11 条

[1] MEMRISTOR - MISSING CIRCUIT ELEMENT [J].