1/f noise in doped semiconductor thermistors

被引：0

作者：

McCammon, D ^{[1
]}

Galeazzi, M ^{[1
]}

Liu, D ^{[1
]}

Sanders, WT ^{[1
]}

Tan, P ^{[1
]}

Boyce, KR ^{[1
]}

Brekosky, R ^{[1
]}

Gygax, JD ^{[1
]}

Kelley, R ^{[1
]}

Mott, DB ^{[1
]}

Porter, FS ^{[1
]}

Stahle, CK ^{[1
]}

Stahle, CM ^{[1
]}

Szymkowiak, AE ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

来源：

LOW TEMPERATURE DETECTORS | 2002年 / 605卷

关键词：

D O I：

暂无

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

We have characterized the 1/f noise in standard ion-implanted silicon thermistors, which are about 250 nm thick. We find that it is associated with the bulk of the implant, and is interpretable as a DeltaR/R fluctuation that is independent of the bias and depends only on the doping density and resistivity, or electron temperature. This excess noise is large enough that it has a significant effect on the energy resolution or NEP of a detector using these thermistors. The very steep temperature dependence of the 1/f noise suggested that it might be related to the conduction becoming two-dimensional, and we have fabricated thicker detectors to test this hypothesis. Similar doped silicon thermistors that are 1500 nm thick show negligible 1/f noise, but otherwise behave identically to the thinner thermistors of the same volume. This simple chance could provide a 40% improvement in resolution for some existing X-ray detectors.

引用

页码：91 / 94

页数：4

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