50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power

被引:120
作者
Lorenser, Dirk [1 ]
Maas, Deran J. H. C.
Unold, Heiko J.
Bellancourt, Aude-Reine
Rudin, Benjamin
Gini, Emilio
Ebling, Dirk
Keller, Ursula
机构
[1] ETH Honggerberg, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[2] FIRST Ctr Micro & Nanosci, CH-8093 Zurich, Switzerland
关键词
mode locking; pulsed lasers; semiconductor lasers; thermal lens; SATURABLE ABSORBER; PULSE GENERATION; REPETITION-RATE;
D O I
10.1109/JQE.2006.878183
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed a passively mode-locked optically-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) which delivers up to 100 mW of average output power at a repetition rate of 50 GHz in nearly transform-limited 3.3-ps pulses at a wavelength around 960 nm. The high-repetition-rate passive mode locking was achieved with a low-saturation-fluence semiconductor saturable absorber mirror (SESAM) incorporating a single layer of quantum-dots. The output power within a nearly diffraction-limited beam was maximized using a gain structure with a low thermal impedance soldered to a diamond heat spreader. In addition, we systematically optimized the laser resonator to accommodate for the strong thermal lens caused by the optical pumping. We measured the thermal lens dioptric power and present a numerical model which is in good agreement with the measurements and is useful for optimizing resonator designs. The experimental setup is very versatile and its design and construction are discussed in detail.
引用
收藏
页码:838 / 847
页数:10
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