Characterization of β-In2-xAlxS3 thin films prepared by chemical spray pyrolysis technique

Indium sulfide (In2S3) is a good window or buffer layer for photovoltaic application. In this work, beta-In2-xAlxS3 thin films with different thicknesses (400, 442, 646 and 714 nm) are successfully synthesized on heated glass substrates using a chemical spray pyrolysis technique. The thin film thickness effect on the structural, optical and photoluminescence (PL) properties of beta-In2-xAlxS3 material is studied. The X-ray diffraction patterns suggest the formation of beta-In2S3 cubic phase preferentially oriented towards (400) direction. The level of the residual dislocation seems to be reduced to 3.12 x 10(9) lines mm(-2) for the optimum thickness (646 nm) for which the beta-In2-xAlxS3 film crystallinity is the best one. In order to enhance the electrical properties, beta-In2-xAlxS3 layers are annealed in air at 400 A degrees C for different annealing times (15, 30 and 45 min). The minimum resistivity, maximum Hall mobility and carrier concentration are found for beta-In2-xAlxS3 films annealed for 30 min. All samples have high transmittance of about 75 % but the wide band gap (E-g = 3.32 eV) is obtained for this optimum thickness. This result indicates good optical quality of beta-In2-xAlxS3 layers. Defects-related PL properties are also discussed.