Minimal conductivity of rippled graphene with topological disorder

被引:21
作者
Cortijo, Alberto [1 ]
Vozmediano, Maria A. H. [1 ]
机构
[1] CSIC, Inst Ciencia Mat, Unidad Asociada UC3M, E-28049 Madrid, Spain
关键词
Fermi level; graphene; sheet materials; DIRAC FERMIONS; DEGENERATE SEMICONDUCTORS; ELECTRONIC-PROPERTIES; CRITICAL-BEHAVIOR; THIRRING MODEL; BERRYS PHASE; SINGLE-LAYER; LOCALIZATION; PARTICLES; STATES;
D O I
10.1103/PhysRevB.79.184205
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the transport properties of a neutral graphene sheet with curved regions induced or stabilized by topological defects. The proposed model gives rise to Dirac fermions in a random magnetic field and in a random scalar potential acting like a space-dependent Fermi velocity induced by the curvature. The last term leads to a singular long-range correlated disorder with special characteristics. The Drude minimal conductivity at zero energy is found to be inversely proportional to the density of topological disorder, a signature of diffusive behavior.
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页数:9
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