Flicker Noise in Bilayer Graphene Transistors

被引：109

作者：

Shao, Qinghui ^{[1
,2
]}

Liu, Guanxiong ^{[1
,2
]}

Teweldebrhan, Desalegne ^{[1
,2
]}

Balandin, Alexander A. ^{[1
,2
]}

Runryantsev, Sergey ^{[3
]}

Shur, Michael S. ^{[3
]}

Yan, Dona ^{[4
]}

机构：

[1] Univ Calif Riverside, Bourns Coll Engn, Dept Elect Engn & Mat Sci, Nanodevice Lab, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Bourns Coll Engn, Engn Program, Riverside, CA 92521 USA

[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Ctr Integrated Elect, Troy, NY 12180 USA

[4] Univ Calif Riverside, Ctr Nanoscale Sci & Engn, Riverside, CA 92521 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 03期

关键词：

Graphene transistors; low-frequency noise;

D O I：

10.1109/LED.2008.2011929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results of the experimental investigation of the low-frequency noise in bilayer graphene transistors. The back-gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point for the transistors was around +10 V. The noise spectra at frequencies f > 10-100 Hz were of the 1/f type with the spectral density on the order of S-I similar to 10(-23)-10(-22) A(2)/Hz at the frequency of 1 kHz. The deviation from the 1/f spectrum at f < 10-100 Hz suggests that the noise is of the carrier-number fluctuation origin due to the carrier trapping by defects. The Hooge parameter was determined to be as low as similar to 10(-4). The gate dependence of the normalized noise spectral density indicates that it is dominated by the contributions from the ungated parts of the device and can be reduced even further. The obtained results are important for graphene electronic and sensor applications.

引用

页码：288 / 290

页数：3

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