InAlN-based LEDs emitting in the near-UV region

被引：15

作者：

Pampili, Pietro ^{[1
,2
]}

Zubialevich, Vitaly Z. ^{[1
]}

Maaskant, Pleun ^{[1
]}

Akhter, Mahbub ^{[1
]}

Corbett, Brian ^{[1
]}

Parbrook, Peter J. ^{[1
,2
]}

机构：

[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[2] Univ Coll Cork, Dept Elect & Elect Engn, Cork, Ireland

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷

基金：

爱尔兰科学基金会;

关键词：

ALN; EMISSION; GAN; PARAMETERS; GALLIUM; GROWTH; INN;

D O I：

10.7567/1347-4065/ab106b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully functional InAlN-based ultraviolet LED semitting at 340-350 nm were demonstrated for the first time; detailed electrical and optical characterization is presented and discussed. Results from the measurements at pulsed conditions are in agreement with the attribution of the dominant electroluminescence peak to near-band-edge emission. The composition of the AlGaN barriers was chosen to give the same internal polarization field as that of the InAlN wells. A simulation study of this polarization-matched heterostructure shows a significant increase in the electron-hole overlap integral if compared with a standard AlGaN/AlGaN active region having the same level of carrier confinement. Limitations and problems of these preliminary devices are also presented, and possible future work aimed at increasing their efficiency is discussed. (C) 2019 The Japan Society of Applied Physics

引用

页数：9

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