Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC

被引：1

作者：

Sometani, Mitsuru ^{[1
]}

Okamoto, Dai ^{[1
]}

Harada, Shinsuke ^{[1
]}

Ishimori, Hitoshi ^{[1
]}

Takasu, Shinji ^{[1
]}

Hatakeyama, Tetsuo ^{[1
]}

Takei, Manabu ^{[1
]}

Yonezawa, Yoshiyuki ^{[1
]}

Fukuda, Kenji ^{[1
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

gate oxide; leakage current; conduction mechanism; Fowler-Nordheim tunneling; Poole-Frenkel emission; RELIABILITY;

D O I：

10.4028/www.scientific.net/MSF.778-780.579

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The conduction mechanism of the leakage current in thermal oxide on 4H-SiC was identified. The carrier separation current voltage method clarified that electrons are the dominant carriers of the leakage current. The temperature dependence of the current voltage characteristics indicated that the conduction mechanism of the leakage current involved not only Fowler-Nordheim tunneling (FN) but also Poole-Frenkel (PF) emission. The PF emission current due to the existence of defects in the oxide increased with temperature.

引用

页码：579 / 582

页数：4

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