Low-temperature growth of Na doped CIGS films on flexible polymer substrates by pulsed laser ablation from a Na containing target

被引:28
作者
Chen, Chia-Chuan [1 ]
Qi, Xiaoding [1 ,2 ,3 ]
Tsai, Mu-Gong [1 ]
Wu, Yun-Fang [1 ]
Chen, In-Gann [1 ,2 ]
Lin, Cen-Ying [4 ]
Wu, Ping-Han [4 ]
Chang, Kuang-Po [4 ]
机构
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[3] Natl Cheng Kung Univ, Res Ctr Energy Technol & Strategy, Tainan 70101, Taiwan
[4] Ind Technol Res Inst, ITRI South, Tainan 734, Taiwan
关键词
CIGS; Solar cell; Pulsed laser deposition; SOLAR-CELLS; CU(IN; GA)SE-2; SODIUM;
D O I
10.1016/j.surfcoat.2012.06.065
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Femtosecond pulsed laser deposition (fs-PLD) was investigated to grow Cu(In,Ga)Se-2 (CIGS) films at low temperature (<= 300 degrees C), which allowed the use of flexible polymer substrates such as polyimide (PI). X-ray diffraction showed that the films grown on the PI substrates had a pure chalcopyrite phase with a preferred (112) orientation. Because the CIGS films grown on the soda-lime glass substrates were known to have the improved photoelectrical properties owing to the Na diffusion from the substrates, in view of the absence of Na in the polymer substrates, we tried to dope the CIGS films intentionally by adding Na into the fs-PLD targets. The CIGS:Na targets were successfully synthesized from the Cu, In, Ga, Se and NaF powders by the solid state reaction. The results showed that the addition of 5 at.% Na in the target did not change the fs-PLD growth parameters notably and well crystallized CIGS:Na films could be grown on the PI substrates, which showed an increased carrier concentration and conductivity. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:209 / 213
页数:5
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