Evolution of water vapor from indium-tin-oxide thin films fabricated by various deposition processes

被引：16
作者：
Seki, S
Aoyama, T
Sawada, Y
Ogawa, M
Sano, M
Miyabayashi, N
Yoshida, H
Hoshi, Y
Ide, M
Shida, A
机构：
[1] Tokyo Inst Polytech, Grad Sch Engn, Atsugi, Kanagawa 2430297, Japan
[2] ESCO Co Ltd, Tokyo 1800013, Japan
[3] Geomatec Co Ltd, Ota Ku, Tokyo 1460093, Japan
[4] Yokohama City Ctr Ind Technol & Design, Kanazawa Ku, Yokohama, Kanagawa 2360004, Japan
来源：
JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY | 2002年 / 69卷 / 03期
关键词：
grain size; indium-tin-oxide; thermal desorption spectroscopy; thin films; water vapor;
D O I：
10.1023/A:1020649232003
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Tin-doped In2O3 (indium-tin-oxide) transparent conducting films are widely used as electrodes of liquid crystal displays and low-E windows. In the present study, a systematic TDS study was undertaken for ITO films fabricated by various deposition processes; such as PVD, dip coating and spray deposition. Water vapor was the main gas evolved from the films; gas evolution from the silicon substrate was negligible. The evolution proceeded via two steps at approximately 373 and 473-623 K. The amount of the evolved water was in the order: (dip-coated film)>(PVD films)> (spray-deposited film). This order was identical to that of the film's resistivities.
引用
收藏
页码：1021 / 1029
页数：9
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