Buried p-type layers in mg-doped InN

被引：81

作者：

Anderson, P. A.

Swartz, C. H.

Carder, D.

Reeves, R. J.

Durbin, S. M. ^{[1
]}

Chandril, S.

Myers, T. H.

机构：

[1] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand

[2] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2378489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variable magnetic field Hall effect, photoluminescence, and capacitance-voltage (CV) analysis have been used to study InN layers grown by plasma assisted molecular beam epitaxy. All three techniques reveal evidence of a buried p-type layer beneath a surface electron accumulation layer in heavily Mg-doped samples. Early indications suggest the Mg acceptor level in InN may lie near 110 meV above the valence band maximum. The development of p-type doping techniques offers great promise for future InN based devices. (c) 2006 American Institute of Physics.

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页数：3

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