Non-destructive elemental depth profiling of Ni/Ti multilayers by GIXRF technique

被引:8
作者
Biswas, A. [1 ]
Abharana, N. [1 ]
Jha, S. N. [2 ]
Bhattacharyya, D. [1 ]
机构
[1] Bhabha Atom Res Ctr, Atom & Mol Phys Div, Mumbai 85, Maharashtra, India
[2] Bhabha Atom Res Ctr, Beamline Dev & Applicat Sect, Mumbai 85, Maharashtra, India
关键词
GIXRF; GIXRR; Depth profiling; Ni/Ti multilayer; Element specific diffusion; X-RAY-FLUORESCENCE; TOTAL-REFLECTION; INTERFACE; DIFFUSION; SURFACE; FILMS; XPS;
D O I
10.1016/j.apsusc.2020.148733
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In thin film multilayer along with total interface widths, study of individual interface widths of the constituent elements of the multilayer is important for the knowledge of diffusion mechanism and diffusion kinetics. Element specific Grazing Incidence X-ray Fluorescence (GIXRF) technique has been used to study the individual interface diffusion of Ni and Ti in the Ni/Ti multilayer. The above measurements yield similar results on the interface qualities of the multilayer as obtained from more widely used Grazing Incidence X-ray reflectivity (GIXRR) technique and give additional information regarding Ni and Ti diffusion separately which cannot be obtained from GIXRR. Ni-fluorescence and Ti-fluorescence GIXRF spectra of 10-bilayer Ni/Ti multilayer films are fitted simultaneously to find the interface widths of Ni and Ti at the Ni-on-Ti and Ti-on-Ni interfaces. The Error function distribution has been used to describe the concentration of elements at the interfaces. Further, the variation of these individual diffusion and individual concentration profile of elements has been studied with annealing of the multilayer. It has been shown that non-destructive and relatively simpler GIXRF technique can be used for elemental depth profiling of a multilayer very precisely, which otherwise can be obtained by using complicated destructive technique like atom probe tomography.
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页数:9
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