Microwave properties of pulsed laser deposited Sc-doped barium hexaferrite films

被引:27
作者
Shi, P [1 ]
Yoon, SD
Zuo, X
Kozulin, I
Oliver, SA
Vittoria, C
机构
[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
[2] Northeastern Univ, Ctr Electromagnet Res, Boston, MA 02115 USA
关键词
D O I
10.1063/1.373222
中图分类号
O59 [应用物理学];
学科分类号
摘要
The properties of thick BaScxFe12-xO19 (0.3 < x < 0.6) scandium hexaferrite films were measured by static and microwave field techniques. Films were deposited by pulsed laser ablation onto c-plane sapphire at oxygen pressures of 20 and 50 mTorr. Vibrating sample magnetometer measurements as corroborated by x-ray data showed that the films below 3 mu m had easy axis of magnetization (c-axis) normal to the film plane with saturation magnetization values of 3.0-3.8 kG. From the ferrimagnetic resonance frequency versus external magnetic field, we deduced a g value of 1.96 +/- 0.03 and uniaxial anisotropy field of similar to 10 kOe. The ferrimagnetic resonance linewidth for the film thicker than 5 mu m was maximum at 32 GHz and decreased with increasing frequency, indicating evidence for nonuniform magnetic field scattering internally. However, the linewidths were lower for films having thickness below 3 mu m. (C) 2000 American Institute of Physics. [S0021-8979(00)26108-2].
引用
收藏
页码:4981 / 4983
页数:3
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