Near-field scanning optical microscopy for characterisation of photovoltaic materials

被引：1

作者：

van Dyk, EE ^{[1
]}

Karoui, A ^{[1
]}

La Rosa, AH ^{[1
]}

Rozgonyi, G ^{[1
]}

机构：

[1] Univ Port Elizabeth, Dept Phys, ZA-6031 Port Elizabeth, South Africa

来源：

CONFERENCE ON PHOTO-RESPONSIVE MATERIALS, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200404848

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Near-field scanning optical microscopy (NSOM) enables nanometer scale studies of optical and opto-electronic properties. A NSOM setup has been designed and constructed to investigated carrier lifetime in the vicinity of extended defects such as grain boundaries and dislocations, as well as surface topography in photovoltaic materials. The benefits of the NSOM technique and the different modes employed are discussed. Some preliminary results are presented. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2292 / 2297

页数：6

共 8 条

[1] NEAR-FIELD OPTICS - MICROSCOPY, SPECTROSCOPY, AND SURFACE MODIFICATION BEYOND THE DIFFRACTION LIMIT
BETZIG, E
TRAUTMAN, JK
[J]. SCIENCE, 1992, 257 (5067) : 189 - 195
[2] Studies of electrically active defects in relaxed GeSi films using a near-field scanning optical microscope
Hsu, JWP
Fitzgerald, EA
Xie, YH
Silverman, PJ
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7743 - 7750
[3] NEAR-FIELD SCANNING OPTICAL MICROSCOPY IMAGING OF INDIVIDUAL THREADING DISLOCATIONS ON RELAXED GEXSI1-X FILMS
HSU, JWP
FITZGERALD, EA
XIE, YH
SILVERMAN, PJ
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (03) : 344 - 346
[4] HSU JWP, 1997, I PHYS C SER, V160, P27
[5] KAROUI A, 2002, AAT23160505 NCSU QR4
[6] TIME AS A CONTRAST MECHANISM IN NEAR-FIELD IMAGING
LAROSA, A
JAHNCKE, CL
HALLEN, HD
[J]. ULTRAMICROSCOPY, 1995, 57 (2-3) : 303 - 308
[7] Optical imaging of carrier dynamics in silicon with subwavelength resolution
LaRosa, AH
Yakobson, BI
Hallen, HD
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (13) : 1656 - 1658
[8] LAROSA AH, 1996, THESIS N CAROLINA ST

← 1 →