Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and subsequent annealing in CO atmosphere

被引：1

作者：

Voelskow, M. ^{[1
]}

Pecz, B. ^{[3
]}

Stoemenos, J. ^{[2
]}

Skorupa, W. ^{[1
]}

机构：

[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[2] Aristotle Univ Thessaloniki, Dept Phys, GR-54006 Thessaloniki, Greece

[3] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2009年 / 267卷 / 8-9期

基金：

匈牙利科学研究基金会;

关键词：

Ge Ion implantation; Co; -; annealing; Nanocrystal formation;

D O I：

10.1016/j.nimb.2009.01.141

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

3C-SiC nanocrystallites were epitaxially formed on a single crystalline Si surface covered by a 150 nm thick SiO2 capping layer after low dose carbon implantation and subsequent high temperature annealing in CO atmosphere. Carbon implantation is used to introduce nucleation sites by forming silicon-carbon clusters at the SiO2/Si interface facilitating the growth of 3C-SiC nanocrystallites. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1364 / 1367

页数：4

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