Optical, electrical and microstructural properties of nanocomposite Ag/diamond by Ag ion implantation and subsequent annealing

被引：5

作者：

Shen, Yanyan ^{[1
]}

Qi, Ting ^{[1
]}

Qiao, Yu ^{[1
]}

Hei, Hongjun ^{[1
]}

He, Zhiyong ^{[1
]}

Yu, Shengwang ^{[1
]}

机构：

[1] Taiyuan Univ Technol, Res Inst Surface Engn, Taiyuan 030024, Peoples R China

来源：

VACUUM | 2016年 / 123卷

关键词：

Freestanding diamond film; Ag nanoparticles; Ion implantation; Surface morphologies; Carrier mobility; SILVER NANOPARTICLES; DIAMOND; SIO2; EVOLUTION; COPPER;

D O I：

10.1016/j.vacuum.2015.11.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An optical-grade, free-standing diamond (FSD) film is prepared by home-made microwave plasma chemical vapor deposition reactor at a condition of input power 8 kW and gas pressure 18 kPa. Then, it is implanted with 80 key Ag ions up to a fluence of 5.0 x 1016 ions/cm(2). After implantation, a subsequent annealing in Ar ambient at 500 degrees C is carried out to fabricate Ag nanoparticles (NPs). Grazing incidence x-ray diffraction results clearly showed that Ag NPs with a (111) orientation are effectively formed after 500 degrees C annealing. Results from field emission scanning electron microscope and atomic force microscope observations indicated that Ag NPs could aggregate and grow on the surface of the diamond film during the annealing process. The Hall effects results showed that Ag-implanted FSD film exhibited an enhanced carrier mobility of 34.7 cm(2) V-1 S-1 after 500 degrees C annealing. Moreover, Raman spectroscopy results show that the damages of the Ag-implanted FSD film are essentially a little and the crystallinity is almost recovered by annealing, it is implied that the enhancement in carrier mobility could be attributed to the conductive paths provided by Ag NPs. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：160 / 166

页数：7

共 36 条

[1] Effect of nitrogen on the electronic properties of ultrananocrystalline diamond thin films grown on quartz and diamond substrates [J].

Achatz, P. ;

Williams, O. A. ;

Bruno, P. ;

Gruen, D. M. ;

Garrido, J. A. ;

Stutzmann, M. .

PHYSICAL REVIEW B, 2006, 74 (15)

[2] Surface morphology, growth rate and quality of diamond films synthesized in hot filament CVD system under various methane concentrations [J].

Ali, M. ;

Urgen, M. .

APPLIED SURFACE SCIENCE, 2011, 257 (20) :8420-8426

[3] Melting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances [J].

Amekura, H. ;

Tanaka, M. ;

Katsuya, Y. ;

Yoshikawa, H. ;

Shinotsuka, H. ;

Tanuma, S. ;

Ohnuma, M. ;

Matsushita, Y. ;

Kobayashi, K. ;

Buchal, Ch. ;

Mantl, S. ;

Kishimoto, N. .

APPLIED PHYSICS LETTERS, 2010, 96 (02)

[4] Microwave plasma reactor with conical-reflector for diamond deposition [J].

An, K. ;

Yu, S. W. ;

Li, X. J. ;

Shen, Y. Y. ;

Zhou, B. ;

Zhang, G. J. ;

Liu, X. P. .

VACUUM, 2015, 117 :112-120

[5] The effect of size-dependent nanoparticle energetics on catalyst sintering [J].

Campbell, CT ;

Parker, SC ;

Starr, DE .

SCIENCE, 2002, 298 (5594) :811-814

[6] Microstructural and electrical studies on diamond films [J].

Chaure, S ;

Chaure, NB ;

Hassan, AK ;

Ray, AK ;

Reehal, HS ;

Ghermazion, A ;

Capan, R .

VACUUM, 2005, 77 (03) :231-235

[7]

Chun KY, 2010, NAT NANOTECHNOL, V5, P853, DOI [10.1038/nnano.2010.232, 10.1038/NNANO.2010.232]

[8] Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure [J].

Correa, Eric J. ;

Wu, Yan ;

Wen, Jian-Guo ;

Chandrasekharan, Ramesh ;

Shannon, Mark A. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (11)

[9] Formation of copper and silver nanometer dimension clusters in silica by the sol-gel process [J].

De, G ;

Tapfer, L ;

Catalano, M ;

Battaglin, G ;

Caccavale, F ;

Gonella, F ;

Mazzoldi, P ;

Haglund, RF .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3820-3822

[10] Nanocrystalline diamond films [J].

Gruen, DM .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1999, 29 :211-259

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