An Improved RF MOSFET Model Including Scalable Gate Resistance and External Inductances

被引：0

作者：

Cha, Jiyong ^{[1
]}

Cha, Jun-Young ^{[1
]}

Jung, Dae-Hyoun ^{[1
]}

Lee, Seonghearn ^{[1
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Kyonggi Do 449791, South Korea

来源：

ISOCC: 2008 INTERNATIONAL SOC DESIGN CONFERENCE, VOLS 1-3 | 2008年

关键词：

RF CMOS; MOSFET; modeling; SPICE model; RF model; scalable model; BSIM3v3;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF non-quasi-static effect and interconnection delay effect are not considered in a conventional BSIM3v3 RF model. For modeling these effects, an improved RF SPICE model for 0.13 mu m MOSFET is developed by including the scalable inductances and using the gate resistance scaling equation. This improved model is validated by finding better agreements with measured S-parameters up to 40GHz at various W-u and Nf than the conventional one.

引用

页码：431 / 432

页数：2

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