An Improved RF MOSFET Model Including Scalable Gate Resistance and External Inductances

被引：0
|
作者：
Cha, Jiyong [1 ]
Cha, Jun-Young [1 ]
Jung, Dae-Hyoun [1 ]
Lee, Seonghearn [1 ]
机构：
[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Kyonggi Do 449791, South Korea
来源：
ISOCC: 2008 INTERNATIONAL SOC DESIGN CONFERENCE, VOLS 1-3 | 2008年
关键词：
RF CMOS; MOSFET; modeling; SPICE model; RF model; scalable model; BSIM3v3;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF non-quasi-static effect and interconnection delay effect are not considered in a conventional BSIM3v3 RF model. For modeling these effects, an improved RF SPICE model for 0.13 mu m MOSFET is developed by including the scalable inductances and using the gate resistance scaling equation. This improved model is validated by finding better agreements with measured S-parameters up to 40GHz at various W-u and Nf than the conventional one.
引用
收藏
页码：431 / 432
页数：2
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