Structure and properties of a-Si:H films grown by cyclic deposition

被引：10

作者：

Afanas'ev, VP ^{[1
]}

Gudovskikh, AS

Kon'kov, OI

Kazanin, MM

Kougiya, KV

Sazanov, AP

Trapeznikova, IN

Terukov, EI

机构：

[1] St Petersburg State Univ Elect Engn, St Petersburg 197022, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] St Petersburg State Pediat Acad, St Petersburg 194100, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 04期

关键词：

D O I：

10.1134/1.1188010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Amorphous hydrogenated silicon films obtained by cyclic deposition with intermediate annealing in hydrogen plasma were studied. a-Si:H films deposited under optimal conditions are photosensitive (photoconductivity to dark conductivity ratio sigma(ph)/sigma(d) is as high as 10(7) under 20 mW cm(-2) illumination in the visible region of the spectrum) and have an optical gap (E-g) and activation energy of conductivity (E-a) of 1.85 and 0.91 eV, respectively. Electron microscopy studies revealed a clearly pronounced layered structure of a-Si:H films and the presence of nanocrystalline inclusions in the amorphous matrix. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：477 / 480

页数：4

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