Structure and properties of a-Si:H films grown by cyclic deposition

被引：10
作者：
Afanas'ev, VP [1 ]
Gudovskikh, AS
Kon'kov, OI
Kazanin, MM
Kougiya, KV
Sazanov, AP
Trapeznikova, IN
Terukov, EI
机构：
[1] St Petersburg State Univ Elect Engn, St Petersburg 197022, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] St Petersburg State Pediat Acad, St Petersburg 194100, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 04期
关键词：
D O I：
10.1134/1.1188010
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Amorphous hydrogenated silicon films obtained by cyclic deposition with intermediate annealing in hydrogen plasma were studied. a-Si:H films deposited under optimal conditions are photosensitive (photoconductivity to dark conductivity ratio sigma(ph)/sigma(d) is as high as 10(7) under 20 mW cm(-2) illumination in the visible region of the spectrum) and have an optical gap (E-g) and activation energy of conductivity (E-a) of 1.85 and 0.91 eV, respectively. Electron microscopy studies revealed a clearly pronounced layered structure of a-Si:H films and the presence of nanocrystalline inclusions in the amorphous matrix. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：477 / 480
页数：4
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