An efficient Terahertz rectifier on the graphene/SiC materials platform

被引：19

作者：

Schlecht, Maria T. ^{[1
]}

Preu, Sascha ^{[2
]}

Malzer, Stefan ^{[1
]}

Weber, Heiko B. ^{[1
]}

机构：

[1] Friedrich Alexander Univ Erlangen Nurnberg FAU, Appl Phys, Staudtstr 7-A3, D-91058 Erlangen, Germany

[2] Tech Univ Darmstadt, Dept Elect Engn & Informat Technol, Merckstr 25, D-64283 Darmstadt, Germany

来源：

SCIENTIFIC REPORTS | 2019年 / 9卷 / 1期

关键词：

EPITAXIAL GRAPHENE; SILICON-CARBIDE; SCHOTTKY DIODES; TRANSISTORS; MILLIMETER; FREQUENCY; TRANSPORT;

D O I：

10.1038/s41598-019-47606-6

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We present an efficient Schottky-diode detection scheme for Tera hertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broadband operation up to 580 GHz, limited only by the RC circuitry, with a responsivity of 1.1 A/W. Remarkably, the voltage dependence of the THz responsivity displays no deviations from DC responsivity, which encourages using this transparent device for exploring the high frequency limits of Schottky rectification in the optical regime. The performance of the detector is demonstrated by resolving sharp spectroscopic features of ethanol and acetone in a THz transmission experiment.

引用

页数：8

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