Dissociation of a product of a surface reaction in the gas phase:: XeF2 reaction with Si -: art. no. 188302

被引：8

作者：

Hefty, RC ^{[1
]}

Holt, JR ^{[1
]}

Tate, MR ^{[1
]}

Gosalvez, DB ^{[1
]}

Bertino, MF ^{[1
]}

Ceyer, ST ^{[1
]}

机构：

[1] MIT, Dept Chem, Cambridge, MA 02139 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 18期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.92.188302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Xenon difluoride interacts with Si(100)2x1 by atom abstraction, whereby a dangling bond abstracts a F atom from XeF2, scattering the complementary XeF. Partitioning of the reaction exothermicity produces sufficient XeF rovibrational excitation for dissociation to occur. The resulting F and Xe atoms are shown to arise from dissociation of XeF in the gas phase by demonstrating that the angle-resolved velocity distributions of F, Xe, and XeF conserve momentum, energy, and mass. This experiment documents the first observation of dissociation of a surface reaction product in the gas phase.

引用

页码：188302 / 1

页数：4

共 15 条

[1] EFFECT OF INCIDENT TRANSLATIONAL ENERGY AND SURFACE-TEMPERATURE ON THE STICKING PROBABILITY OF F2 AND O-2 ON SI(100)-2X1 AND SI(111)-7X7 [J].