Emission Directionality of Semiconductor Ring Lasers: A Traveling-Wave Description

被引：59
作者：
Javaloyes, Julien [1 ]
Balle, Salvador [2 ]
机构：
[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland
[2] Univ Illes Balears, Inst Mediterrani Estudis Avancats IMEDEA, E-07071 Esporles, Spain
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2009年 / 45卷 / 5-6期
关键词：
Coupled cavities; ring lasers; semiconductor lasers; thermal effects; traveling-wave modeling; Q-SWITCHED LASERS; OPTICAL AMPLIFIERS; REFRACTIVE-INDEX; DYNAMICS; MODEL; GAIN; TIME;
D O I：
10.1109/JQE.2009.2014079
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We use a traveling-wave model for explaining the experimentally observed changes in the directionality of the emission of semiconductor ring lasers and its different behavior when current is increased or decreased. The modulation of the cavity losses imposed by the light extraction sections together with the thermal shift of the gain spectrum and spatial hole burning in the carrier density play a crucial role in the directionality of the emission and its changes with operation current. The differences as the current is increased or decreased correspond to the different role played by spatial hole burning.
引用
收藏
页码：431 / 438
页数：8
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