Dose rate dependence of RADFET irradiation and post-irradiation responses

被引：0

作者：

Jaksic, A ^{[1
]}

Kimoto, Y ^{[1
]}

Mohammadzadeh, A ^{[1
]}

Mathewson, A ^{[1
]}

机构：

[1] Natl Microelect Res Inst, Cork, Ireland

来源：

2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several RADFET biasing configurations have been compared in terms of radiation sensitivity, dose rate dependence and fading. Positive gate bias increases sensitivity, however the drawback is that the fading is also increased and dose rate dependence is observed. Samples irradiated with zero and negative gate bias have lower sensitivity, but don't exhibit significant fading and dose rate dependence. The mechanisms underlying the observed effects have been analysed.

引用

页码：661 / 664

页数：4

共 8 条

[1] SPACE-CHARGE DOSIMETER - GENERAL PRINCIPLES OF A NEW METHOD OF RADIATION DETECTION [J].