Novel ZrInZnO Thin-film Transistor with Excellent Stability

被引：246

作者：

Park, Jin-Seong ^{[1
]}

Kim, KwangSuk ^{[1
]}

Park, Yong-Gil ^{[1
]}

Mo, Yeon-Gon ^{[1
]}

Kim, Hye Dong ^{[1
]}

Jeong, Jae Kyeong ^{[1
]}

机构：

[1] Samsung SDI Co Ltd, Corp R&D Ctr, Yongin 446577, Gyeonggi Do, South Korea

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 03期

关键词：

BIAS-STRESS; INSTABILITIES; DEPENDENCE;

D O I：

10.1002/adma.200802246

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Novel ZrInZnO semiconductor materials to resolve transistor instability for active-matrix organic light-emitting diodes are proposed. The ZrInZnO film is prepared using a cosputtering method, and presents a nanocrystal structure embedded in an amorphous matrix. The thin-film transistors fabricated show good electrical performance as well as excellent stability under long-term bias stresses.

引用

页码：329 / 333

页数：5

共 29 条

[1]

Azaroff L.V., 1968, Elements of X-ray Crystallography, P552

[2] High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[3] Solution-processed indium-zinc oxide transparent thin-film transistors [J].

Choi, Chaun Gi ;

Seo, Seok-Jun ;

Bae, Byeong-Soo .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (01) :H7-H9

[4]

Chung H.-K., 2006, SID INT S, V37, P1447

[5] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[6] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[7] BIAS STRESS-INDUCED INSTABILITIES IN AMORPHOUS-SILICON NITRIDE HYDROGENATED AMORPHOUS-SILICON STRUCTURES - IS THE CARRIER-INDUCED DEFECT CREATION MODEL CORRECT [J].

GELATOS, AV ;

KANICKI, J .

APPLIED PHYSICS LETTERS, 1990, 57 (12) :1197-1199

[8] DC-gate-bias stressing of a-Si : H TFTs fabricated at 150°C on polyimide foil [J].

Gleskova, H ;

Wagner, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) :1667-1671

[9] Towards see-through displays:: Fully transparent thin-film transistors driving transparent organic light-emitting diodes [J].

Görrn, P ;

Sander, M ;

Meyer, J ;

Kröger, M ;

Becker, E ;

Johannes, HH ;

Kowalsky, W ;

Riedl, T .

ADVANCED MATERIALS, 2006, 18 (06) :738-+

[10] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

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