Electronic structure of multi-walled carbon nanotubes studied by photoemission spectroscopy

被引：0

作者：

Suzuki, S ^{[1
]}

Bower, C ^{[1
]}

Watanabe, Y ^{[1
]}

Heun, S ^{[1
]}

Kiyokura, T ^{[1
]}

Nath, KG ^{[1
]}

Ogino, T ^{[1
]}

Zhu, W ^{[1
]}

Zhou, O ^{[1
]}

机构：

[1] NTT Corp, Basic Res Labs, Kanagawa 2430198, Japan

来源：

NANONETWORK MATERIALS: FULLERENES, NANOTUBES AND RELATED SYSTEMS | 2001年 / 590卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoemission spectra were measured from the tips and the sidewalls of multi-walled carbon nanotubes grown on Si substrates. The results show that the Fermi level is located slightly inside the conduction band at the tips. We suggest that the Fermi level pinning is due to a large defect density at the tips of the multi-walled carbon nanotubes.

引用

页码：193 / 196

页数：4

共 8 条

[1] Plasma-induced alignment of carbon nanotubes [J].