The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs

被引：19

作者：

Khachatrian, A. ^{[1
]}

Buchner, S. ^{[1
]}

Koehler, A. ^{[1
]}

Affouda, C. ^{[1
]}

McMorrow, D. ^{[1
]}

LaLumondiere, S. D. ^{[2
]}

Dillingham, E. C. ^{[2
]}

Bonsall, J. P. ^{[2
]}

Scofield, A. C. ^{[2
]}

Brewe, D. L. ^{[3
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

[2] Aerosp Corp, El Segundo, CA 90245 USA

[3] Argonne Natl Lab, Lemont, IL 60439 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2019年 / 66卷 / 07期

关键词：

Charge generation; GaN; gate-connected field plate; HEMT; single-event transients (SETs); single-photon absorption; X-rays; CURRENT COLLAPSE; ABSORPTION; PRISTINE; VOLTAGE;

D O I：

10.1109/TNS.2019.2910493

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning the X-ray beam across the HEMT depend strongly on the presence of the field plate, radiation strike location, bias conditions, and X-ray photon energy. For the particular HEMT we tested, the gate-connected field plate reduces the electric-field strength near the edge of the gate by a factor of approximately 2, which results in faster decaying transients and less collected charge.

引用

页码：1682 / 1687

页数：6

共 17 条

[1]

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